Submicron patterned doping of GaAs using a thin solid Si dopant source by transient excimer laser melting
- 1 May 1988
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B
- Vol. 6 (3) , 850-852
- https://doi.org/10.1116/1.584308
Abstract
No abstract availableThis publication has 0 references indexed in Scilit: