Millimeter-Wave Monolithic GaAs Power FET Amplifiers

1 October 1986

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 061-063
https://doi.org/10.1109/gaas.1986.10400004

Abstract

Millimeter-wave monolithic GáAs power FETs with total gate widths of up to 400 μm and output powers up to 200 mW have been developed. These amplifiers were fabricated using sub-half-micron gate length FETs on MBE grown epitaxial layers with η + contact layers. A source overlay structure with via groundings has been used for the FET design. Power densities of 0.75 W/mm, 0.5 W/mm, and 0.45 W/mm were obtained at 29 GHz, 34 GHz and 41 GHz, respectively.

Keywords

FIELD EFFECT TRANSISTORS
GAIN
LOGIC GATES
GALLIUM ARSENIDE
POWER AMPLIFIERS
POWER GENERATION
MOLECULAR BEAM EPITAXIAL GROWTH

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