Impurity-band tails based on semiempirical pseudopotentials in heavily doped semiconductors
- 15 February 1983
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 27 (4) , 2387-2395
- https://doi.org/10.1103/physrevb.27.2387
Abstract
A new approximate method is presented for calculating the one-electron Green's function and the density of states for heavily doped semiconductors. The Green's function which was given by Bonch-Bruevich and by the present author under different approaches is used, but the true impurity potentials are replaced by semiempirical pseudopotentials giving an improved description of impurity-band tails. The theory is tested with the use of experimental data of the density of states in -GaAs, showing considerable good agreement. In contrast, earlier theories turn out not to explain the experiments.
Keywords
This publication has 15 references indexed in Scilit:
- Impurity-band density of states in heavily doped semiconductors: A variational calculationPhysical Review B, 1980
- Impurity-Band Tails in the High-Density Limit. I. Minimum Counting MethodsPhysical Review B, 1966
- Perturbation-Moment Method: Application to Band Structure of Impure SemiconductorsPhysical Review B, 1963
- Thomas-Fermi Approach to Impure Semiconductor Band StructurePhysical Review B, 1963
- Theory of the Band Structure of Very Degenerate SemiconductorsPhysical Review B, 1962
- The electronic structure of disordered systemsPhilosophical Magazine, 1961
- Energy Levels of a Disordered AlloyPhysical Review B, 1956
- Energy Levels of a Disordered AlloyPhysical Review B, 1955
- Multiple Scattering of Waves. II. The Effective Field in Dense SystemsPhysical Review B, 1952
- Multiple Scattering of WavesReviews of Modern Physics, 1951