Influence of Doping Concentration on Intersubband Relaxation in Modulation‐Doped Quantum Well Structures
- 1 September 1992
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 173 (1) , 373-379
- https://doi.org/10.1002/pssb.2221730137
Abstract
Intersubband scattering in multiple n‐type modulation‐doped quantum well structures is studied by an infrared bleaching technique at room temperature. The repopulation of the lowest subband of the well is directly observed. In GaAs/Al0.35Ga0.65As quantum wells (thickness 5.9 nm) an increase of the relaxation time from 4 to 7.5 ps is found for increasing doping concentrations from 3.2 × 1011 to 1.4 × 1012 cm−2. Carrier transfer between the wells and barrier states is discussed as a process which determines the relaxation time.Keywords
This publication has 13 references indexed in Scilit:
- Intersubband Carrier Scattering in Multiple Quantum well StructuresPublished by Springer Nature ,1991
- Subpicosecond luminescence study of tunneling and relaxation in coupled quantum wellsPhysical Review B, 1990
- Dynamics of resonant and nonresonant electron tunneling in double-quantum-well structures under electric fieldsPhysical Review B, 1990
- Time resolved inter-subband relaxation in GaAs/GaAlAs multiple quantum wellsSolid-State Electronics, 1989
- Γ-X transfer rates in type II (Al)GaAs / AlAs superlatticesSolid-State Electronics, 1989
- Time-resolved Raman measurements of intersubband relaxation in GaAs quantum wellsPhysical Review Letters, 1989
- Direct measurement of resonant and nonresonant tunneling times in asymmetric coupled quantum wellsPhysical Review B, 1989
- Picosecond infrared spectroscopy of hot carriers in a modulation-dopedAs multiple-quantum-well structurePhysical Review B, 1988
- Intersubband relaxation in GaAs-As quantum well structures observed directly by an infrared bleaching techniquePhysical Review Letters, 1987
- Time-resolved Raman scattering in GaAs quantum wellsPhysical Review Letters, 1987