IMPLANTATION PROFILES FOR 40-keV PHOSPHORUS IONS IN SILICON SINGLE-CRYSTAL SUBSTRATES

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15 January 1966

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 8 (2) , 46-48
https://doi.org/10.1063/1.1754475

Abstract

No abstract available

Keywords

This publication has 3 references indexed in Scilit:

RANGE OF ENERGETIC Xe¹²⁵ IONS IN MONOCRYSTALLINE SILICON
Canadian Journal of Physics, 1964
Silicon heavily doped by energetic cesium ions
Journal of Physics and Chemistry of Solids, 1963
A REINVESTIGATION OF THE RANGE OF Na²⁴ IONS OF KEV ENERGIES IN ALUMINUM
Canadian Journal of Chemistry, 1963