Process induced midgap level in SiGe alloys
- 31 July 1990
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 75 (2) , 151-153
- https://doi.org/10.1016/0038-1098(90)90361-e
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- Electronic properties of selenium-doped siliconJournal of Applied Physics, 1980