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Theory of electronic bound states associated with n-type inversion layers on silicon
Home
Publications
Theory of electronic bound states associated with n-type inversion layers on silicon
Theory of electronic bound states associated with n-type inversion layers on silicon
GK
G.M. Kramer
G.M. Kramer
BM
B.G. Martin
B.G. Martin
RW
R.F. Wallis
R.F. Wallis
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1 May 1978
journal article
Published by
Elsevier
in
Surface Science
Vol. 73
,
96
https://doi.org/10.1016/0039-6028(78)90474-0
Abstract
No abstract available
Keywords
SILICON
ELECTRONIC BOUND
INVERSION LAYERS
TYPE INVERSION
BOUND STATES
STATES ASSOCIATED
THEORY OF ELECTRONIC
Cited
Cited by 8 articles
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