Liquid-Phase Epitaxy of In× GA1−×As

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Abstract
Layers grown by liquid‐phase epitaxy were obtained in the range of , when grown on the (111 Ga) plane of GaAs. Attempts to grow alloys on the (110), (111 As), (100), and (112 As) planes resulted in polycrystalline layers. The alloy composition was determined by x‐ray fluorescence and the band gap by infrared transmission. The ternary‐phase diagram was calculated using Darken's quadratic formalism to describe the ternary liquid and assuming the solid solution in equilibrium with the liquid to be regular. It was found that the experimental results were in good agreement with the calculated phase diagrams. A number of liquidus isotherms were calculated in the temperature range of 700°–1200°C. Gallium arsenide isoconcentration curves are shown for 0.95, 0.90, 0.80, 0.50, and 0.30 mole fraction.

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