Influence of defect interaction upon their recombination in ionic crystals. I

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Abstract
The theory of diffusion-controlled recombination of radiation-induced defects incorporating the tunneling electron transfer between spatially well-separated defects, the long-range elastic interaction and their annihilation at short distances is presented. The upper and lower bound variational estimates of the quasi-steady recombination radius R are given. It is shown that the Arrhenius relation breaks down under certain conditions. (The difference between the calculated effective radius and the radius which gives the maximum contribution to the partial tunneling recombination intensity is emphasized). The actual radii of F,H center recombination in KBr crystal are calculated for different temperatures and compared with the typical Coulomb attraction radius (for Ao g – Vk pair).