Thermoelectric and galvanomagnetic properties of chalcogens (Te, Se) at high pressures up to 30 GPa
- 1 November 2001
- journal article
- Published by Pleiades Publishing Ltd in JETP Letters
- Vol. 74 (10) , 486-490
- https://doi.org/10.1134/1.1446541
Abstract
The longitudinal and transverse Nernst-Ettingshausen effects have been measured at high pressures up to 30 GPa. The results of studying Te and Se in the region of metal-semiconductor phase transformations are presented as a demonstration of the possibilities of the given technique. In agreement with magnetoresistance data, it was found that the hole mobility grows with increasing pressure as a result of a decrease in the band gap width. Mechanisms of hole scattering at high pressures were determined.Keywords
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