The Growth Kinetics and Surface Morphology of GaN Epitaxial Layers on Sapphire
- 1 January 1982
- journal article
- Published by Wiley in Crystal Research and Technology
- Vol. 17 (7) , 835-840
- https://doi.org/10.1002/crat.2170170708
Abstract
The growth kinetics of GaN on Sapphire was analyed on the base of some experimental data such as: the growth rate temperature depandence, on the base of some experimental data such as: the growth rate temperature dependence, the grwoth rate dependence on the gas flow velocity, the growth rate depandence on the crystallographic and spatial orientation of the substrate. The limiting stage of the epitaxy process was established at different growth conditions. The morphology of GaN epitaxial layers obtained at these conditions is described.Keywords
This publication has 4 references indexed in Scilit:
- Properties of GaN tunneling MIS light-emitting diodesJournal of Applied Physics, 1978
- Optical Properties of GaN Light Emitting DiodesJournal of the Electrochemical Society, 1976
- Cubic phase gallium nitride by chemical vapour depositionPhysica Status Solidi (a), 1974
- Vapor epitaxy of gallium nitrideJournal of Crystal Growth, 1972