SiP precipitation within the doped silicon lattice, concomitant with phosphorus predeposition
- 1 December 1976
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 47 (12) , 5489-5491
- https://doi.org/10.1063/1.322549
Abstract
From experiments of thermal predeposition of phosphorus in silicon, performed at 920 °C and followed by neutron activation analysis and TEM observations, it is concluded that SiP precipitation takes place in the furnace during the isothermal process. In fact, the surface concentration of phosphorus increases with predeposition time attaining values well above the solid solubility; in addition the flat rodlike SiP precipitates grow with the time of predeposition, according to a parabolic law. Finally, considerations of the size of the precipitates indicate that they are not formed during the cooling stage subsequent to predeposition.This publication has 9 references indexed in Scilit:
- Predeposition in Silicon as Affected by the Formation of Orthorhombic SiP and Cubic SiO2 · P 2 O 5 at the PSG‐Si InterfaceJournal of the Electrochemical Society, 1976
- Kinetics of Phosphorus Predeposition in Silicon Using POCl3Journal of the Electrochemical Society, 1975
- On phosphorus diffusion in silicon under oxidizing atmospheresSolid-State Electronics, 1973
- On the Kinetics of Precipitate DissolutionMetal Science Journal, 1969
- Semiconductor PhysicsPublished by Elsevier ,1969
- On the Kinetics of Precipitate DissolutionMetal Science Journal, 1968
- Formation and Composition of Surface Layers and Solubility Limits of Phosphorus During Diffusion in SiliconJournal of the Electrochemical Society, 1964
- The Diffusion of Phosphorus in SiliconJournal of the Electrochemical Society, 1962
- Solid Solubilities of Impurity Elements in Germanium and Silicon*Bell System Technical Journal, 1960