Bipolar MOS power device simulator TonaddeIIc taking into account external circuit

Publisher Website

25 August 2005

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 32-37
https://doi.org/10.1109/ispsd.1990.991054

Abstract

First Page of the Article Author(s) Nakagawa, A. Toshiba R&D Center Sato, K.

Keywords

This publication has 1 reference indexed in Scilit:

Field-dependent mobility model for two-dimensional numerical analysis of MOSFET's
IEEE Transactions on Electron Devices, 1979