Fast direct e-beam lithographic fabrication of first-order gratings for 1.3 μm DFB lasers

21 January 1988

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 24 (2) , 123-125
https://doi.org/10.1049/el:19880082

Abstract

Phase-shifted first-order gratings for 1.3 μm distributed-feedback (DFB) lasers have been fabricated in InP by fast direct e-beam lithography. The two-layer resist system consisted of a highly sensitive (∼3 μC/cm²) positive organosilicon e-beam resist, poly(3-butenyltrimethylsilane sulfone) (PBTMSS), and a bottom layer of diamond-like carbon (DLC). The high quality of these gratings was reflected in the excellent characteristics of the DFB lasers.

Keywords

DLC
POLY(3-BUTENYLTRIMETHYLSILANE SULFONE)
1.3 MICRON
DFB LASERS
DIFFRACTION GRATINGS
SENSITIVITY 3 ΜC/CM2
DIAMOND LIKE C FILMS
PBTMSS
INP
POSITIVE ORGANOSILICON E-BEAM RESIST
TWO-LAYER RESIST SYSTEM
DIAMOND-LIKE CARBON
PHASE SHIFTED FIRST ORDER GRATINGS
FAST DIRECT E-BEAM LITHOGRAPHY

This publication has 1 reference indexed in Scilit:

Degradation and Passivation of Poly(alkenylsilane sulfone)s in Oxygen Plasmas
Published by American Chemical Society (ACS) ,1987