Interface Reaction of SiO2 and GaAs during High-Temperature Heat-Treatments
- 1 June 1980
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 19 (6)
- https://doi.org/10.1143/jjap.19.1107
Abstract
Transmission electron microscopy (TEM) has been used to investigate an interface structure of a SiO2/GaAs system after high-temperature heat treatments. A (0001)-oriented single crystal GaAsO4 was observed on (100)GaAs and a twinned GaAsO4 on (111)GaAs.Keywords
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