Improved technique for the preparation of Ga _x Al _{1−
x} As electroluminescent diodes

13 January 1972

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 8 (1) , 16-17
https://doi.org/10.1049/el:19720012

Abstract

An improved technique for the preparation of Ga_xAl_1−xAs electroluminescent diodes is described. Multilayer structures grown by liquid-phase epitaxy are used to achieve high external quantum efficiencies.

Keywords

IMPROVED TECHNIQUE
MULTILAYER STRUCTURES
PREPARATION
ELECTROLUMINESCENT DIODES
GAXAL1-XAS

Improved technique for the preparation of Ga x Al 1− x As electroluminescent diodes

Abstract

Keywords

Improved technique for the preparation of Ga _x Al _{1−
x} As electroluminescent diodes