Growth of GaAs Crystals in the 〈111〉 Polar Direction
- 1 September 1960
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 31 (9) , 1696-1697
- https://doi.org/10.1063/1.1735930
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Growth of Gallium Arsenide by Horizontal Zone MeltingJournal of Applied Physics, 1960
- Growth of InSb Crystals in the Polar DirectionJournal of Applied Physics, 1960
- Characteristics of the {111} Surfaces of the III–V Intermetallic CompoundsJournal of the Electrochemical Society, 1960
- On the Growth of Gallium Arsenide Crystals from the MeltJournal of Applied Physics, 1959
- Syringe-Type Single-Crystal Furnace for Materials Containing a Volatile ConstituentReview of Scientific Instruments, 1958