Effect of interfacial states on open-circuit voltage
- 1 January 1988
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 1608-1613 vol.2
- https://doi.org/10.1109/pvsc.1988.105984
Abstract
A comparative study of the effects of interfacial-state densities on the open-circuit voltages of solar cells is presented. Several different types of photodiode (n-on-p and p-on-n single-crystal silicon, GaAs homojunction, ITO/p-Si, and polycrystalline CuInSe/sub 2/) were examined. No dispersion in capacitance vs. frequency was observed in single-crystal homojunction photodiodes indicating near-zero interfacial-state densities for these devices. High efficiency (about 12%) ITO/Si showed interfacial densities at the Fermi level on the order of 10/sup 9/ eV/sup -1/ cm/sup -2/, but this number increased to 2.5*10/sup 12/ for cells with only 5% efficiency. CuInSe/sub 2/ solar cells showed zero bias interfacial-state densities in the range of 10/sup 10/-10/sup 11/ eV/sup -1/ cm/sup -2/. This number decreased by an order of magnitude in reverse bias, but it increased substantially with light intensity until saturation near 100 mW/cm/sup 2/.Keywords
This publication has 4 references indexed in Scilit:
- Summary Abstract: Indium tin oxide/Si and CdS/CuInSe2 solar cells: Characterization and modelingJournal of Vacuum Science & Technology A, 1986
- CuInSe2/Cd(Zn)S solar cell modeling and analysisSolar Cells, 1986
- The effect of deep states on the photovoltaic performance of CdZnS/CuInSe2 thin film devicesSolar Cells, 1986
- The capacitance of p-n heterojunctions including the effects of interface statesIEEE Transactions on Electron Devices, 1967