Characterization of an InGaAsP semiconductor laser amplifier as a multifunctional device
- 1 July 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Journal of Lightwave Technology
- Vol. 11 (7) , 1147-1150
- https://doi.org/10.1109/50.238074
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Monolithically integrated 4×4 InGaAsP/InP laser amplifier gate switch arraysElectronics Letters, 1992
- Three-function semiconductor laser amplifiersPublished by Optica Publishing Group ,1992
- Traveling wave semiconductor laser amplifier detectorsJournal of Lightwave Technology, 1990
- System performance of semiconductor laser amplifier detectorsElectronics Letters, 1989
- Semiconductor laser optical amplifiers for use in future fiber systemsJournal of Lightwave Technology, 1988
- Amplified spontaneous emission and gain characteristics of Fabry-Perot and traveling wave type semiconductor laser amplifiersIEEE Journal of Quantum Electronics, 1988
- Channelled-substrate buried-heterostructure InGaAsP/InP laser with semi-insulating OMVPE base structure and LPE regrowthElectronics Letters, 1986
- Signal-monitoring characteristics for laser-diode optical switchesJournal of Lightwave Technology, 1985
- 100 Mbit/s laser diode terminal with optical gain for fibre-optic local area networksElectronics Letters, 1984
- Integrated Optics: Theory and TechnologyPublished by Springer Nature ,1982