Kinetics of laser induced interface reactions in Sb/Ge thin multilayer films
- 1 July 1991
- journal article
- Published by Elsevier in Surface Science
- Vol. 251-252, 1006-1011
- https://doi.org/10.1016/0039-6028(91)91141-j
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Early stages of melting in Si under nanosecond laser pulse irradiation: A time-resolved studyJournal of Applied Physics, 1991
- Diffusion and microstructures induced by excimer laser irradiation in Ge-Sb thin film bilayersApplied Surface Science, 1990
- Simultaneous crystallization of both elements in amorphous GeSb and GeAl eutectic alloysJournal of Non-Crystalline Solids, 1990
- Measurements of the optical properties of liquid silicon and germanium using nanosecond time-resolved ellipsometryApplied Physics Letters, 1987
- Chapter 2 ion-beam- and laser-induced surface modificationsMaterials Science and Engineering, 1985