RADIATIVE RECOMBINATION THROUGH IMPURITY LEVELS IN GaAs p-n JUNCTIONS
- 1 September 1963
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 3 (5) , 71-72
- https://doi.org/10.1063/1.1753873
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- SEMICONDUCTOR MASER OF GaAsApplied Physics Letters, 1962
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- Coherent Light Emission From GaAs JunctionsPhysical Review Letters, 1962
- Optical Absorption of Gallium Arsenide between 0.6 and 2.75 eVPhysical Review B, 1962
- CorrespondenceProceedings of the IRE, 1962
- Impurity Band in Semiconductors with Small Effective MassPhysical Review B, 1955