Self‐Diffusion of Gallium in Gallium Arsenide

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Abstract
The self‐diffusion of gallium in gallium arsenide has been studied over the temperature range 1100°–1025°C using radiotracer techniques. Gallium arsenide samples were diffused with 72Ga evaporated layers under known pressure of arsenic in sealed capsules. Following diffusion, layers were removed from the surface using anodic oxidation followed by oxide dissolution, and the72Ga concentration in each layer was measured by counting the γ‐radiation. This sectioning method, which allows accurate determination of very shallow profiles, has allowed measurements of the diffusion coefficient to be made at lower temperatures than those employed by Goldstein, and the significance of the profile shapes measured is discussed in relation to the existence of possible “tails” in the profiles. It is concluded that there is only evidence for a single diffusion mechanism in the concentration and temperature range studied. Diffusion coefficients obtained in the temperature range 1025°–1100°C are from to under a constant arsenic pressure of 0.75 atm, and lead to an activation energy of the order of and a pre‐exponential factor of . The results are discussed in comparison with previous measurements by Goldstein. The measured diffusion profiles are the first reported under known arsenic pressure and final surface concentration of gallium.

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