Innovative passivated heterojunction bipolar transistor grown by CBE
- 3 December 1992
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 28 (25) , 2308-2309
- https://doi.org/10.1049/el:19921485
Abstract
An innovative passivated heterojunction bipolar transistor structure, which enables with the same technological step both base surface passivation and emitter selective etching to be obtained, is reported. This new structure employs an emitter comprising two layers, a thin GaInP layer and a GaAlAs layer.Keywords
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