Analytical and numerical modeling of electron-beam controlled semiconductor switches
- 25 August 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 853-856
- https://doi.org/10.1109/ppc.1989.767622
Abstract
The subject of this paper is the mathematical modeling of a recently proposed/sup 1/ class of electron-beam controlled high power semiconductor switches which are able to overcome the space charge limitation of conventional EBS (electron bombarded semiconductor) devices by utilizing the secondary ionization effects of cathodoluminiscence and bremsstrahlung. Current densities of several kA/cm/sup 2/ at forward voltages of tens of volts can be controlled with an electron-beam of 100 keV and 1 A/cm/sup 2/; hold-off voltages of more than 100kV/cm and dark currents as small 10 /spl mu/A/cm/sup 2/ are possible. The concept allows for fast and repetitively closing and opening under load and is therefore suitable for inductive energy storage applications.Keywords
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