Effect of leakage current on the power output of s band TRAPATT oscillators

11 July 1974

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 10 (14) , 277-278
https://doi.org/10.1049/el:19740220

Abstract

The effect of externally enhanced leakage current on S band TRAPATT diodes is reported. Without enhanced leakage, the TRAPATT has an effective leakage current density of the order of 0·4 A/cm². Calculations indicate that the leakage current due to carrier storage provides the electron density for initiating the avalanche process.

Keywords

S-BAND
TRANSIT TIME DEVICES
LEAKAGE CURRENTS
LEAKAGE CURRENT EFFECT
SOLID STATE MICROWAVE OSCILLATORS
AVALANCHE DIODES
TRAPATT DEVICES

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