Production of β-SiC buffer layers for CVD diamond thin films by ion implantation
- 1 April 1994
- journal article
- Published by Elsevier in Diamond and Related Materials
- Vol. 3 (4-6) , 500-505
- https://doi.org/10.1016/0925-9635(94)90211-9
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Textured diamond growth on (100) β-SiC via microwave plasma chemical vapor depositionApplied Physics Letters, 1992
- Raman scattering studies of chemical-vapor-deposited cubic SiC films of (100) SiJournal of Applied Physics, 1988
- Formation of SiC and Si3N4in silicon by ion implantationRadiation Effects, 1976
- FORMATION OF SiC IN SILICON BY ION IMPLANTATIONApplied Physics Letters, 1971
- Solution grown SiC p-n junctionsJournal of Physics D: Applied Physics, 1969
- Detection of ultraviolet radiation using silicon carbide p-n junctionsSolid-State Electronics, 1967