A monolithic 2-20 GHz GaAs pin diode SP16T switch

13 January 2003

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/mwsym.1989.38916

Abstract

A broadband, monolithic, single-pole, sixteen-throw (SP16T) switch has been fabricated using GaAs vertical PIN diodes. The SP16T switch features less than 4.5-dB insertion loss with greater than 35-dB isolation across the 2-20-GHz band. A novel de-embedding scheme used for switch characterization is also introduced.

Keywords

GALLIUM ARSENIDE
SWITCHES
SWITCHING CIRCUITS
DIODES
FETS
INSERTION LOSS
SIZE CONTROL
SCANNING ELECTRON MICROSCOPY
IMPEDANCE
AEROSPACE ELECTRONICS

This publication has 0 references indexed in Scilit: