The microstructural location of the intergranular metal-oxide phase in a zinc oxide varistor
- 1 April 1978
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 49 (4) , 2407-2411
- https://doi.org/10.1063/1.325135
Abstract
High‐resolution electron microscopy of a commerical ZnO‐based varistor reveals that the Bi‐rich intergranular phase is found at all three‐ and four‐grain junctions and that the majority of the ZnO grains are not surrounded by an oxide‐barrier film as previously believed.This publication has 9 references indexed in Scilit:
- Grain Boundary Phases in a Hot‐Pressed MgO Fluxed Silicon NitrideJournal of the American Ceramic Society, 1977
- Investigation of various models for metal oxide varistorsJournal of Electronic Materials, 1976
- Physical properties of the electrical barriers in varistorsJournal of Vacuum Science and Technology, 1976
- Microstructure and phase transformation in a highly non−Ohmic metal oxide varistor ceramicJournal of Applied Physics, 1975
- Nature of an intergranular thin−film phase in a highly non−Ohmic metal oxide varistorJournal of Applied Physics, 1975
- The physics of metal oxide varistorsJournal of Applied Physics, 1975
- Nature of Intergranular Phase in Nonohmic ZnO Ceramics Containing 0.5 Mol% Bi2O3Journal of the American Ceramic Society, 1974
- Electrical Properties of ZnO‐Bi2O3 CeramicsJournal of the American Ceramic Society, 1973
- Nonohmic Properties of Zinc Oxide CeramicsJapanese Journal of Applied Physics, 1971