DC Green Electroluminescence of Al-CuGaS2 Diode
- 1 November 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (11B) , L1606
- https://doi.org/10.1143/jjap.31.l1606
Abstract
The dc green electroluminescence (EL) spectra observed at the Al-CuGaS2 diode are described over the temperature range of 100-220 K. The EL is just correspondent with the main EL of the Al-ZnS-CuGaS2 heterojunction diode. This confirms our previous proposal for the green EL from the Al-ZnS-CuGaS2 heterojunction diode that it originates from the CuGaS2 crystal, not from the ZnS film. Some possibilities for the electron injection from the Al electrode are also discussed in association with the current-voltage characteristics.Keywords
This publication has 9 references indexed in Scilit:
- Green Electroluminescence from ZnS-CuGaS2 Heterojunction Diode in DC OperationJapanese Journal of Applied Physics, 1991
- Role of Zn Impurities in CuGaS2 at Relatively Low Concentrations Revealed by Photoluminescence MeasurementsJapanese Journal of Applied Physics, 1990
- Polarized Near-Band Edge Photoluminescence in CuGaS2 Single CrystalJapanese Journal of Applied Physics, 1988
- Luminescence of CuGaS2Journal of Applied Physics, 1985
- Photoluminescence of CuGaS2 and heterostructure formation with sputtered ZnSIl Nuovo Cimento D, 1983
- Luminescent properties of CuGaS2 doped with Cd or ZnJournal of Applied Physics, 1974
- Preparation and properties of green-light-emitting CdS–CuGaS2 heterodiodesJournal of Applied Physics, 1974
- Green electroluminescence from CdS–CuGaS2 heterodiodesApplied Physics Letters, 1973
- p-type conductivity and green photoluminescence of CuGaS2 grown by iodine transportJournal of Luminescence, 1973