A Nondestructive Measurement of Thickness and Composition of Thin Silicon Oxide Films

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Abstract
Thickness and composition of thin dielectric films are frequently dependent upon the system deposition parameters. A method is described for determining both thickness and composition of a film containing a mixture of two materials, provided the refractive index and relative permittivity is known for each of the two components. A combination of scanning interferometry and capacitance measurements was used to test the method of the Si–SiO–SiO2 system, obtaining an over-all accuracy in thickness on the order of 250 Å for film thickness on the order of 0.4 μ.

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