Silicon Epitaxy by Plasma Dissociation of Silane
- 1 January 1980
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 19 (S1)
- https://doi.org/10.7567/jjaps.19s1.647
Abstract
A plasma epitaxy system has been designed to realize low temperature epitaxial growth of silicon. In this system control on the silane dissociation rate and the silicon deposition rate is done separately with the aid of RF glow discharge. Investigations by RBS, TED and TEM techniques proved that layers grown by this method at as low as 700°C kept good crystalline quality. Electrical measurements have been also carried out and revealed that the electrical properties of the layers grown at 750°C were equivalent to those of bulk silicon.Keywords
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