Study of the Behavior of Traps in CdTe Nuclear Detectors by Optical Techniques
- 1 February 1975
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 22 (1) , 241-245
- https://doi.org/10.1109/tns.1975.4327645
Abstract
A method involving the generation of charge carriers by nuclear particles (α-particles or γ-rays) and measuring the charge collection efficiency or counting rate while simultaneously exciting with monochromatic light has been used for the study of deep traps in CdTe intended for semiconductor detectors. The electric field distribution may be determined by looking at the shape of the pulse. A way of directly observing the electric field was to utilize the electrooptic effect of CdTe, which has the zincblende structure, by viewing the optical transmission between crossed polarizers as a function of applied bias and time. These techniques have been applied to CdTe but can be applied to other materials.Keywords
This publication has 10 references indexed in Scilit:
- Time-dependent polarization of CdTe gamma-ray detectorsNuclear Instruments and Methods, 1974
- Characterization of the Transport Properties of Halogen-Doped CdTe Used for Gamma-Ray DetectorsIEEE Transactions on Nuclear Science, 1974
- CdTe Detectors from Indium-Doped Tellurium-Rich SolutionsIEEE Transactions on Nuclear Science, 1974
- Self-compensation in CdTeJournal of Physics and Chemistry of Solids, 1974
- Advances in CdTe Gamma-Ray DetectorsIEEE Transactions on Nuclear Science, 1974
- Polarization Phenomena in CdTe: Preliminary ResultsCanadian Journal of Physics, 1973
- Non-Γ donor levels and kinetics of electron transfer in n-type CdTeSolid State Communications, 1972
- Cadmium telluride, grown from tellurium solution, as a material for nuclear radiation detectorsPhysica Status Solidi (a), 1970
- ELECTRO-OPTIC CHARACTERISTICS OF CdTe AT 3.39 AND 10.6μApplied Physics Letters, 1969
- Transient Currents in Semi-Insulating CdTe Characteristic of Deep TrapsJournal of Applied Physics, 1968