Stability hierarchy of the pseudomorphic FeSi2 phases: α, γ, and defected CsCl

16 October 1995

journal article
conference paper
Published by AIP Publishing in Applied Physics Letters

Vol. 67 (16) , 2293-2295
https://doi.org/10.1063/1.115130

Abstract

We present a total‐energy stability diagram of FeSi₂ phases which explains the recent experimental findings of pseudomorphic epitaxy on Si(111), depending on film thickness and growth conditions. In particular, our tight binding calculations point out that the appearance of the fluorite structure (γ) at very low coverages can only be attributed to a binding energy with the silicon substrate sizeably larger than tetragonal (α) and CsCl‐defected phases.

Keywords

EPITAXY
FILM GROWTH
IRON SILICIDES
MORPHOLOGY
PHASE STABILITY
PHASE STUDIES
PHASE TRANSFORMATIONS
TIGHT BINDING APPROXIMATION

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