NO2 Sensitive Ga-doped ZnO Thin Film
- 1 February 1992
- journal article
- Published by Oxford University Press (OUP) in Chemistry Letters
- Vol. 21 (2) , 323-326
- https://doi.org/10.1246/cl.1992.323
Abstract
The resistivity of a Ga-doped ZnO film in a NO2 atmosphere remarkably increases with decreasing the thickness of the film while that in air remains unchanged. A Ga-doped ZnO film with 75 nm in thickness shows high sensitivity and rapid response to NO2 at 400 °C.This publication has 1 reference indexed in Scilit:
- Interactions of tin oxide surface with O2, H2O AND H2Surface Science, 1979