High-rate deposition of polycrystalline silicon thin films by hot wire cell method using disilane
- 28 February 2001
- journal article
- Published by Elsevier in Solar Energy Materials and Solar Cells
- Vol. 66 (1-4) , 225-230
- https://doi.org/10.1016/s0927-0248(00)00177-x
Abstract
No abstract availableKeywords
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- Analysis of H2-Dilution Effects on Photochemical Vapor Deposition of Si Thin FilmsJapanese Journal of Applied Physics, 1997
- Determination of the Arrhenius parameters for disilane .dblarw. silane + silicon dihydride and .DELTA.H.degree.f (SiH2) by RRKM analysis for forward and reverse reaction rate dataThe Journal of Physical Chemistry, 1992