Application of stochastic hopping transport to hole conduction in amorphous SiO2

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Abstract
Charge relaxation in MIS capacitors, employing a thin film of amorphous SiO2 as the gate insulator, was studied as a function of time and temperature following exposure to a pulsed 12‐MeV electron beam. The results can be explained by rapid transport of the radiation‐generated electrons to the electrodes followed by a much slower temperature‐activated transport of the holes, which dominates the charge relaxation at observable times. It is shown that a stochastic transport model based on a continuous time random walk provides a good description of the data.