A revised boundary condition for the numerical analysis of Schottky barrier diodes
- 1 September 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 7 (9) , 525-527
- https://doi.org/10.1109/edl.1986.26460
Abstract
A new boundary condition for the computer simulation of Schottky barrier diodes is proposed. In this model the electron transport analysis can be extended to higher bias voltages by utilizing a current-dependent surface recombination velocity which is based on a drifted Maxwellian distribution of carrier velocities. Calculations based on this revised boundary condition predict a depletion of electrons at the Schottky boundary compared with an accumulation predicted in previously published calculations.Keywords
This publication has 7 references indexed in Scilit:
- A simple model for computer simulation of Schottky-barrier diodesSolid-State Electronics, 1984
- On the current-voltage characteristics of epitaxial Schottky barrier diodesSolid-State Electronics, 1984
- Analysis and Simulation of Semiconductor DevicesPublished by Springer Nature ,1984
- Advanced concepts in VLSI Schottky-barrier diode modelingPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1982
- Monte Carlo simulation of current transport in forward-biased Schottky-barrier diodesElectronics Letters, 1976
- Current transport in metal-semiconductor barriersSolid-State Electronics, 1966
- Diffusion of Hot and Cold Electrons in Semiconductor BarriersPhysical Review B, 1962