Operation of an amorphous-emitter transistor
- 15 November 1974
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 25 (10) , 585-587
- https://doi.org/10.1063/1.1655321
Abstract
A unique device employing a threshold‐type chalcogenide glass as the emitter of a heterojunction transistor has been fabricated. The device exhibits strikingly different behavior depending on whether the amorphous semiconductor is in the on or off state. The several modes of transistor operation can be explained in terms of recently proposed heterojunction band models. An additional implication of the data is the predominance of electrons rather than holes in the one state of the glass, in direct contrast to the low‐field behavior.Keywords
This publication has 3 references indexed in Scilit:
- On-state characteristics of amorphous/crystalline heterojunctionsApplied Physics Letters, 1974
- Switching Phenomena in Thin FilmsJournal of Vacuum Science and Technology, 1973
- Properties of chalcogenide glass-silicon heterojunctionsApplied Physics Letters, 1973