Single-drift flat-profile GaAs impatt diodes at 90 GHz
- 13 February 1986
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 22 (4) , 224-225
- https://doi.org/10.1049/el:19860156
Abstract
GaAs impatt diodes were fabricated for the 90 GHz range using the single-drift-region structure with flat doping profile. The diodes were fabricated from molecular-beam-epitaxial material and mounted on diamond heat sinks. A highest output power of 240 mW with 4.1% efficiency at 89.6 GHz was achieved.Keywords
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