Use of n + spike doping regions as nonequilibrium connectors
- 31 March 1988
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 24 (7) , 434-435
- https://doi.org/10.1049/el:19880294
Abstract
Very thin n+ layers of semiconductor (spike doping) may be used to control the potential difference between microelectronic components while not significantly modifying any nonequilibrium distributions of electron energy or momentum across their extent. We demonstrate this general principle with the example of a hot electron injection Gunn diode.Keywords
This publication has 1 reference indexed in Scilit:
- Gunn-Hilsum Effect ElectronicsPublished by Elsevier ,1980