Microscopic Scatterer Displacements Generate theResistance Noise of H in Pd
- 15 August 1988
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 61 (7) , 889-892
- https://doi.org/10.1103/physrevlett.61.889
Abstract
The resistance changes generated by individual microscopic displacements due to dissolved hydrogen ions hopping between neighboring sites within palladium films create intense noise at low temperature. Crossover to one-dimensional diffusion-mediated number-fluctuation noise occurs for K. The measured resistance change per proton displacement is comparable to the resistance per proton as predicted by applicable quantum-interference theories.
Keywords
This publication has 20 references indexed in Scilit:
- Feng, Lee, and Stone respondPhysical Review Letters, 1987
- Comment on ‘‘Sensitivity of the conductance of a disordered metal to the motion of a single atom: Implications for1/fnoise’’Physical Review Letters, 1987
- Sensitivity of the Conductance of a Disordered Metal to the Motion of a Single Atom: Implications forNoisePhysical Review Letters, 1986
- Aharonov-Bohm effect in normal metal quantum coherence and transportAdvances in Physics, 1986
- Universal Conductance Fluctuations in MetalsPhysical Review Letters, 1985
- Dependence ofNoise on Defects Induced in Copper Films by Electron IrradiationPhysical Review Letters, 1985
- 1/fnoise of metals: A case for extrinsic originPhysical Review B, 1985
- Nearly TracelessNoise in BismuthPhysical Review Letters, 1983
- Resistivity dependence ofnoise in metal filmsPhysical Review B, 1983
- Low-frequency fluctuations in solids:noiseReviews of Modern Physics, 1981