Electron irradiation and trapping centres in zinc sulphide single crystals
- 16 July 1970
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 2 (3) , 597-605
- https://doi.org/10.1002/pssa.19700020321
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Experimental and calculated atomic displacement threshold energies for binary semiconductorsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1969
- Electron accelerator modifications for precise atomic displacement threshold energy determinationsNuclear Instruments and Methods, 1968
- The effect of radiation damage at room temperature on the thermoluminescence characteristic of single crystals of zinc sulphidePhysics Letters, 1966
- Annealing of Radiation Defects in SemiconductorsJournal of Applied Physics, 1959
- Electrical Resistivity Study of Lattice Defects Introduced in Copper by 1.25-Mev Electron Irradiation at 80°KPhysical Review B, 1956
- Isothermal Annealing Effects in Irradiated CopperPhysical Review B, 1953