Design of GaAs MESFET Oscillator Using Large-Signal S-Parameters
- 1 December 1977
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 25 (12) , 981-984
- https://doi.org/10.1109/tmtt.1977.1129260
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- Submicron Single-Gate and Dual-Gate GaAs MESFET's with Improved Low Noise and High Gain PerformanceIEEE Transactions on Microwave Theory and Techniques, 1976
- GaAs microwave power FETIEEE Transactions on Electron Devices, 1976
- A high-power microwave GaAs FET oscillatorPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1976
- Design and Performance of X-Band Oscillators with GaAs Schottky-Gate Field-Effect TransistorsIEEE Transactions on Microwave Theory and Techniques, 1975
- RF Amplifier Design with Large-Signal S-ParametersIEEE Transactions on Microwave Theory and Techniques, 1973
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