Electron spin resonance observation of the creation, annihilation, and charge state of the 74-Gauss doublet in device oxides damaged by soft x rays
- 26 October 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (17) , 1334-1336
- https://doi.org/10.1063/1.98670
Abstract
The E′ related defect called the 74-Gauss doublet is shown to be produced by reaction of E′ with hydrogen and is positively charged like the E′. The doublet is easily annihilated by exposure to ultraviolet light in contrast to the E′ which is comparatively stable. The new positive defect identified here appears to be the third paramagnetic ‘‘trivalent silicon’’ apparently generally responsible for damage and repair of damage to thermal oxides on silicon.Keywords
This publication has 11 references indexed in Scilit:
- Electron spin resonance observation of defects in device oxides damaged by soft x raysApplied Physics Letters, 1987
- Electron spin resonance study of high field stressing in metal-oxide-silicon device oxidesApplied Physics Letters, 1986
- Amphoteric defects at the Si-SiO2 interfaceApplied Physics Letters, 1986
- Diffusion of radiolytic molecular hydrogen as a mechanism for the post-irradiation buildup of interface states in SiO2-on-Si structuresJournal of Applied Physics, 1985
- Hole traps and trivalent silicon centers in metal/oxide/silicon devicesJournal of Applied Physics, 1984
- Hydrogen migration under avalanche injection of electrons in Si metal-oxide-semiconductor capacitorsJournal of Applied Physics, 1983
- Relationship between x-ray-produced holes and interface states in metal-oxide-semiconductor capacitorsJournal of Applied Physics, 1983
- Interface states and electron spin resonance centers in thermally oxidized (111) and (100) silicon wafersJournal of Applied Physics, 1981
- The Role of Hydrogen in SiO2 Films on SiliconJournal of the Electrochemical Society, 1979
- Structural, Optical, and Electrical Properties of Amorphous Silicon FilmsPhysical Review B, 1970