The MOVPE growth and doping of ZnTe

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Abstract
Zinc telluride layers have been grown on (100) GaAs, GaSb and ZnTe substrates at 350 degrees C with atmospheric pressure MOVPE. Diisopropyl-telluride, dimethylzinc-triethylamine and diethylzinc were chosen as metallorganic precursors. The samples were characterized by photoluminescence at 2 K and the Hall effect. In the PL spectra the light hole, heavy hole and bound exciton transitions are well resolved. Most of the transitions have been assigned. The partial pressure ratios of the alkyls were optimized. The influence of composition and stoichiometry of the substrates on the purity of the ZnTe is revealed. Various alkyls as sources of As, Bi, Ga, In and I were investigated for their suitability as p- or n-type dopants. It is shown that tetraethylbiarsine and ethyliodide are promising alkyls for p- and n-type doping of ZnTe.