The numerical analysis of semiclassical transport problems

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Abstract
A numerical method is described for calculating the first order response of an electron distribution to changes of field or scattering rate or for deriving the time development of any small distortion of the distribution. The initial state may be in thermal equilibrium or may be modified by biassing fields. The technique simplifies the analysis of transport problems in which low symmetry perturbations distort a basic system of higher symmetry. The application of the method to the calculation of the galvanomagnetic properties of materials for small electric fields is set out as a detailed example and is illustrated by reference to n-type GaAs.

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