1.53 μm DFB lasers by mass transport

16 August 1984

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 20 (17) , 692-694
https://doi.org/10.1049/el:19840475

Abstract

DFB lasers emitting at λ=1.53 μm made by mass transport have been demonstrated. Output power exceeding 5 mW/ facet was obtained when operated in CW at room temperature. Single-longitudinal-mode operation with a minimum threshold current of 26 mA was achieved. No degradation can be observed after aging at 5 mW continuous power at room temperature for more than 1000 h.

Keywords

SEMICONDUCTOR LASERS
MINIMUM THRESHOLD CURRENT
III-V SEMICONDUCTORS
CW OPERATION
ROOM TEMPERATURE
AGING
LPE
DISTRIBUTED FEEDBACK
LASERS MANUFACTURED BY MASS TRANSPORT
WAVELENGTH 1.53 MICRON
INGAASP
OUTPUT POWER &GT
5 MW PER FACET
DFB LASERS

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