RECOMBINATION SCHEME AND INTRINSIC GAP VARIATION IN GaAs1−x−Px SEMICONDUCTORS FROM ELECTRON BEAM AND p-n DIODE EXCITATION
- 1 October 1964
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 5 (7) , 144-146
- https://doi.org/10.1063/1.1754090
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- Band Structure and Transport Properties of Some 3–5 CompoundsJournal of Applied Physics, 1961
- Band Structure and Electron Transport of GaAsPhysical Review B, 1960