Quantum well emission transistor with tunneling output current
- 1 July 1989
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 66 (1) , 425-429
- https://doi.org/10.1063/1.343840
Abstract
We propose a novel tunneling quantum well emission transistor (TQWET), in which the gate-induced modulation of the Fermi level in the quantum well leads to a strong variation of the tunneling current to the collector through the specially designed collector barrier. The device is calculated to possess a high transconductance and a large current drive. Low-temperature utilization of the transistor implies a high electron mobility in the quantum well (QW) and, therefore, low lateral resistance along the QW, a major current and speed limitation of the device. With this limitation taken into account, the TQWET shows the delay times ∼1.4 and 1.5 ps for temperatures 10 and 77 K, respectively.This publication has 3 references indexed in Scilit:
- Theory of the quantum well emission transistorJournal of Applied Physics, 1989
- Novel high-speed transistor based on charge emission from a quantum wellApplied Physics Letters, 1988
- Multilevel double error correcting codesElectronics Letters, 1981