Experimental study of p layers in ‘‘tunnel’’ junctions for high efficiency amorphous silicon alloy multijunction solar cells and modules
- 21 March 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (12) , 1517-1519
- https://doi.org/10.1063/1.111877
Abstract
The role of the p layer in the formation of good quality ‘‘tunnel’’ junctions and its dependence on the attainment of high efficiency hydrogenated amorphous silicon alloy (a‐Si:H) multijunction cells has been investigated. A new technique, namely, the evaluation of the current‐voltage characteristics of the NIPN structure consisting of a single‐junction n‐i‐p cell with an overlying dopedn layer, has been developed for the determination of losses at the ‘‘tunnel’’ junction. Using an optimized p layer, an initial conversion efficiency of 11.4% has been obtained on a double junction a‐Si:H module of aperture area ∼900 cm2.Keywords
This publication has 2 references indexed in Scilit:
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- Enhancement of open circuit voltage in high efficiency amorphous silicon alloy solar cellsApplied Physics Letters, 1986